Growth temperature dependent strain in relaxed Ge microcrystals

Investor logo
Investor logo

Warning

This publication doesn't include Faculty of Medicine. It includes Faculty of Science. Official publication website can be found on muni.cz.

Authors

MEDUŇA Mojmír FALUB Claudiu Valentin ISA Fabio VON KÄNEL Hans

Year of publication 2018
Type Article in Periodical
Magazine / Source Thin Solid Films
MU Faculty or unit

Faculty of Science

Citation
Doi http://dx.doi.org/10.1016/j.tsf.2018.08.033
Keywords Patterned substrates; Silicon substrates; Germanium; Nanocrystals; X-ray diffraction; Crystal Defects; Low energy plasma enhanced chemical vapor deposition
Description Using high resolution X-ray diffraction with reciprocal space mapping, we obtain the lattice parameters, strain and degree of relaxation at different growth temperatures of microcrystals.
Related projects:

You are running an old browser version. We recommend updating your browser to its latest version.

More info